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BUK71/7909-75ATE
TrenchPLUS standard level FET
Rev. 01 -- 12 August 2002 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance and a TrenchPLUS diode for temperature sensing. Product availability: BUK7109-75ATE in SOT426 (D2-PAK) BUK7909-75ATE in SOT263B (TO-220AB).
1.2 Features
s Integrated temperature sensor s Electrostatic discharge protection s Q101 compliant s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS 75 V s RDSon = 8.0 m (typ) s VF = 658 mV (typ) s SF = -1.54 mV/K (typ).
2. Pinning information
Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline
mb mb
Description gate (g) anode (a) drain (d) cathode (k) source (s) mounting base; connected to drain (d)
Symbol
d a
g 12345
MBL317
s
k
Front view
MBK127
1
5
MBL263
SOT426
(D2-PAK)
SOT263B (TO-220AB)
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) peak drain current total power dissipation gate-source clamping current Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 continuous tp = 5 ms; = 0.01 Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IDR IDRM EDS(AL)S storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 75 A; VDS 75 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 C
[1] [2] [1] [2] [2]
Conditions
Min -55 -55 -
Max 75 75 20 120 75 75 480 272 10 50 100 +175 +175 120 75 480 739
Unit V V V A A A A W mA mA V C C A A A mJ
Source-drain diode
Avalanche ruggedness
Electrostatic discharge Vesd electrostatic discharge voltage, pins Human Body Model; C = 100 pF; 1,3,5 R = 1.5 k 6 kV
[1] [2]
Current is limited by power dissipation chip rating Continuous current is limited by package.
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
2 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
120 Pder (%) 80
03na19
120
03ni95
ID (A)
80
Capped at 75 A due to package
40
40
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 200 Tmb (C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 ID (A)
03ni96
Limit RDSon = VDS/ID
tp = 10 s
102
100 s
Capped at 75 A due to package DC 10
1 ms
10 ms 100 ms
1 1 10 102 VDS (V) 103
Tmb = 25 C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
3 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
4. Thermal characteristics
Table 3: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT263B SOT426 Rth(j-mb) thermal resistance from junction to mounting base vertical in still air minimum footprint; mounted on a PCB Figure 4 60 50 K/W K/W Conditions Min Typ Max Unit
0.55 K/W
4.1 Transient thermal impedance
1 Z th(j-mb) (K/W)
03ni64
= 0.5
10-1
0.2 0.1 0.05 0.02
10-2
P
=
tp T
single shot
tp T t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
4 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
5. Characteristics
Table 4: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 75 V; VGS = 0 V Tj = 25 C Tj = 175 C V(BR)GSS IGSS gate-source breakdown voltage gate-source leakage current IG = 1 mA; -55 C < Tj < 175 C VGS = 10 V; VDS = 0 V Tj = 25 C Tj = 175 C RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VF SF Vhys forward voltage; temperature sense diode temperature coefficient temperature sense diode temperature sense diode forward voltage hysteresis total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 IF = 250 A IF = 250 A; -55C < Tj < 175 C 125 A < IF < 250 A 648 -1.4 25 8 658 -1.54 32 9 19 668 -1.68 50 m m mV mV/K mV 22 1000 10 nA A 20 0.1 22 10 250 A A V 2 1 3 4 4.4 V V V 75 70 V V Min Typ Max Unit Static characteristics
Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VGS = 10V; VDS = 60 V; ID = 25 A; Figure 14 121 20 44 4700 800 455 35 108 185 100 nC nC nC pF pF pF nS nS nS nS
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
5 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
Table 4: Characteristics...continued Tj = 25 C unless otherwise specified. Symbol Ld Parameter internal drain inductance Conditions measured from upper edge of drain mounting base to center of die measured from source lead to source bond pad IS = 25 A; VGS = 0 V; Figure 17 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Min Typ 2.5 Max Unit nH
Ls
internal source inductance
-
7.5
-
nH
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.85 75 270 1.2 V ns nC
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
6 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
350 ID (A) 280
03ni80
10 20
9
8.5 8
label is VGS (V) 7.5
16 RDSon (m) 14
03ni82
210
7 6.5
12
140 6 70 5.5 5 4.5 0 0 2 4 6 8 10 VDS (V)
10
8
6 5 10 15 VGS (V) 20
Tj = 25 C; tp = 300 s
Tj = 25 C; ID = 50 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
20 RDSon (m) 15 VGS = 5.5V 6V 6.5V 7V
03ni81
2.4 a
03nb25
1.6
10 8V 5 10 V 20 V
0.8
0 0 100 200 300 I (A) 400 D
0 -60 0 60 120 T (C) 180 j
Tj = 25 C; tp = 300 s
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
7 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2
03aa35
3
typ
10-3
min
typ
max
2
min
10-4
1
10-5
0 -60 0 60 120 Tj (C) 180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
80 gfs (S) 60
03ni83
8000 C (pF) 6000 Ciss
03ni97
40
4000
Crss Coss
20
2000
0 0 25 50 75 I (A) 100 D
0 10-2 10-1 1 10 VDS(V) 102
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
8 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
100 ID (A) 75
03ni84
10 VGS (V) 8 14 V 6
03ni92
50 4 175 C 25 Tj = 25 C 2 VDS = 60 V
0 0 2 4 6V 8 GS (V)
0 0 50 100 QG (nC) 150
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values.
700 VF (mV)
03ne84
1.70 -SF (mV/K) 1.65
03ne85
max
600
1.60
1.55
typ
500
1.50
1.45
min
400 0 50 100 150 Tj (C) 200
1.40 645 650 655 660 665 670 675 VF (mV)
IF = 250 A
VF at Tj = 25 C; IF = 250 A
Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values.
Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values.
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
9 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
100 IS (A) 75
03ni85
50 175 C 25 Tj = 25 C
0 0.0 0.4 0.8 1.2 VSD (V) 1.6
VGS = 0 V
Fig 17. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
10 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
6. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped) SOT426
A E A1
D1 mounting base
D
HD
3 1
Lp
2
4
5
b
c Q
e
e
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT426
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-12-14 99-06-25
Fig 18. SOT426 (D2-PAK).
9397 750 09878 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
11 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220
SOT263B
E p1 p A A1 q D1
D
mounting base
L1 Q m L L2
1
e b
5
wM c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.85 0.70 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 1.7 L 15.0 13.5 L1
(1)
L2
(2)
m 0.8 0.6
p 3.8 3.6
p1 4.3 4.1
q 3.0 2.7
Q 2.6 2.2
w 0.4
2.4 1.6
0.5
Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B REFERENCES IEC JEDEC 5-lead TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-11
Fig 19. SOT263B (TO-220AB).
9397 750 09878 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
12 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
7. Soldering
handbook, full pagewidth
10.85 10.60 10.50 1.50 7.50 7.40 1.70
2.25 2.15
8.15
8.35
8.275 1.50
4.60
0.30 4.85
5.40 8.075
7.95
3.00
0.20
solder lands solder resist occupied area solder paste
1.70 (2x)
3.40 8.15
0.90 1.00
MSD058
Dimensions in mm.
Fig 20. Reflow soldering footprint for SOT426.
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
13 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
8. Revision history
Table 5: Rev Date 01 20020812 Revision history CPCN Description Product data; initial version
9397 750 09878
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
14 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
9. Data sheet status
Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Product data
Production
[1] [2]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
10. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
11. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
12. Trademarks
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 09878
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 12 August 2002
15 of 16
Philips Semiconductors
BUK71/7909-75ATE
TrenchPLUS standard level FET
Contents
1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
(c) Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 12 August 2002 Document order number: 9397 750 09878

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